Infineon
INFINEON BSP75N 1A smart low-side switch in SIPMOS tech. AEC-Q100 qualified with full protection for industrial & automotive use.
Infineon BTS428L2ATMA1 one-channel smart high-side power switch, 16 V, 7 A nominal load current, for grounded loads in 5 V, 12 V and 24 V systems.
Infineon BTS462T high-side power switch: 16V, 14A, AEC-Q100, TO-252-5. Ideal for industrial, automotive, and computer peripherals.
Infineon BTS6163D high‑side power FET switch, 80A, AEC‑Q100 qualified. For automotive, power management & industrial control.
Infineon BTS721L1 quad high side power switch in SOIC-20 package. 5 to 34 V input range, 85 mΩ on-state resistance and AEC-Q100 qualified.
INFINEON BTS723GW high-side power switch. 42V, 9A, 2 channels, with AEC-Q100 qualification. Ideal for automotive, HVAC.
INFINEON ICE3B0365J AC/DC flyback controller IC. 10W, 85-265V AC input, low standby power & integrated protections. DIP-8 package.
Infineon BTS740S2 dual-channel high-side power switch rated 43 V with 50 A current limit per channel, SOIC-20 package and AEC-Q100 qualification.
Infineon AEC-Q101 qualified Schottky diode, 40V, 120mA. Ideal for meter protection, bias isolation & clamping. SOT-23 surface mount.
Infineon IRLML2803PBF SOT-23 MOSFET: 30V, 850mA, low Rds(on). Ideal for efficient power switching & DC-DC conversion.
Infineon 55V, 4.7A dual N-channel MOSFET in SO-8 package. Low 0.043ohm Rds(on) for efficient power switching in converters & motor drives.
Infineon N-channel power MOSFET rated 60V and 43A in a TO-220AB through-hole package for power supplies and high-frequency circuits.
Infineon CY7C68013A USB Microcontroller, 8051 core, 48MHz, TQFP-128, 3V-3.6V. Ideal for portable devices.
Infineon 256Kbit I2C FRAM NVRAM in 8-pin SOIC. High endurance, no write delays, 2.7V-5.5V. Ideal for embedded design.
Infineon 64Kbit SPI FRAM NVRAM offering 151-year data retention & 100 trillion write cycles. AEC-Q100 qualified, 8-pin SOIC package.
Infineon high-speed CAN transceiver, 1 Mbaud, SOIC-8 package. AEC-Q100 qualified for automotive & industrial applications.
64Kbit I2C F-RAM memory, 8K x 8, 1MHz, 2.7-3.65V, SOIC 8. High endurance, 121-year retention.
Infineon 64Kbit F-RAM non-volatile memory, 8K x 8, 16MHz SPI, 3 V to 3.6 V, 8-pin SOIC. AEC-Q100 Grade 1 qualified for automotive designs.
Infineon OptiMOS P2 P-Channel MOSFET, 40V, 90A, TO-252 (DPAK), SMD. AEC-Q101 qualified for reliable automotive and power applications.
High-efficiency INFINEON OptiMOS 5 MOSFET. 100A, 25V, 950µΩ Rds(on). For power conversion, motor control & computing.
Infineon N-Channel Power MOSFET, 100V, 33A, 0.044 ohm. TO-263 Surface Mount package with ultra-low ON-resistance for efficient power management.
Infineon IRLL2705 N-Channel Power MOSFET: 55V, 3.8A, 0.04Ω, SOT-223 surface mount. Low on-resistance, robust for efficient power switching.
High-efficiency Infineon N-Channel CoolMOS™ MOSFET, 650V, 20.7A, 0.19Ω. For power supplies, computing & electronics.
Infineon ESD5V3U2U series protection device. 5.3V operating, 28V max clamping voltage in TSFP case. For circuit safeguarding.
