Infineon N-Channel Power MOSFET 100V 33A TO-263
Infineon N-Channel Power MOSFET, 100V, 33A, 0.044 ohm. TO-263 Surface Mount package with ultra-low ON-resistance for efficient power management.
The Infineon N-Channel Power MOSFET utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with fast switching speed and a ruggedised device design, provides extremely efficient and reliable operation for use in a wide variety of applications.
Featuring a surface-mount power package capable of accommodating die sizes up to HEX-4, this component delivers the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is particularly suitable for high current applications due to its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Key Features
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain Source On State Resistance: 0.044 ohm
- Case Style: TO-263 (D2PAK)
- Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 130W
- No. of Pins: 3
- Operating Temperature Max: 175°C
- MSL: MSL 1 - Unlimited
- Channel Type: N Channel
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain Source On State Resistance: 0.044 ohm
- Case Style: TO-263 (D2PAK)
- Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 130W
- No. of Pins: 3
- Operating Temperature Max: 175°C
- MSL: MSL 1 - Unlimited
- Weight: 1.724 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Transistor Case Style: TO-263 (D2PAK)
- Transistor Mounting: Surface Mount
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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