Infineon 64Kbit F-RAM Non-Volatile Memory 8K x 8 16MHz 8-Pin SOIC

Infineon 64Kbit F-RAM Non-Volatile Memory is an 8K x 8 ferroelectric memory device in an 8-pin SOIC surface-mount package, providing fast, high-endurance non-volatile data storage with a SPI interface operating at up to 16MHz.

Overview

The Infineon CY15B064Q-SXE is a 64Kbit F-RAM (Ferroelectric Random Access Memory) non-volatile memory built using an advanced ferroelectric process. Read and write operations run at full bus speed, with no write delays. Data is written to the memory array immediately after each byte is transferred, so the next bus cycle can begin without data-polling overhead. The device is designed as a direct hardware replacement for serial flash and EEPROM, simplifying system design while improving performance and reliability.

Key Features

• High-speed SPI interface operating at up to 16MHz, supporting SPI mode 0 (0,0) and mode 3 (1,1)
• Write protection combining a hardware active-low Write Protect (/WP) pin with software-configurable block protection for ¼, ½, or the entire memory array
• Low power consumption, with 300µA active current at 1MHz and a typical 6µA standby current at +85°C
• Low operating voltage from 3 V to 3.6 V and an extended automotive temperature range from –40°C to +125°C
• Automotive qualified to AEC-Q100 Grade 1 standards
• Supplied in an 8-pin SOIC surface-mount package

Endurance and Data Retention

The device supports up to 10¹³ read/write cycles and reliably preserves data for 121 years, supporting long-term data integrity in demanding applications.

Physical Details

The memory is logically organised as 8K x 8 and has a stated weight of 0.968 g. Width, depth, and height are listed as 3.3, 1.5, and 4.3 respectively, as provided in the product data.

This F-RAM memory IC is suited to automotive designs and space-constrained applications, offering fast, durable non-volatile storage in a compact surface-mount package.