Infineon 64Kbit SPI FRAM NVRAM, 8-Pin SOIC

The Infineon 64Kbit SPI FRAM (Ferroelectric Random Access Memory) offers reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. This advanced non-volatile memory reads and writes similarly to RAM, providing a robust solution for data storage.

Unlike serial flash and EEPROM, this FRAM device performs write operations at bus speed, meaning no write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device, allowing the next bus cycle to commence without the need for data polling. In addition, the device offers substantial write endurance compared with other non-volatile memories, supporting 100 trillion (10^14) read/write cycles.

Key Features

• Automotive grade AEC-Q100 qualified
• Advanced high-reliability ferroelectric process
• Up to 20MHz frequency
• Sophisticated write protection scheme
• Low power consumption with an active current of 200μA at 1MHz and a typical standby current of 3μA
• Low voltage operation from 2.7V to 3.65V
• Operating temperature range from -40°C to 85°C

The device provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement, delivering high performance and endurance for demanding applications.