Infineon Dual N-Channel MOSFET 55V 4.7A SO-8
Infineon 55V, 4.7A dual N-channel MOSFET in SO-8 package. Low 0.043ohm Rds(on) for efficient power switching in converters & motor drives.
The Infineon Dual N-Channel MOSFET is a high-performance semiconductor device from the renowned HEXFET series, designed for efficient power switching and amplification in demanding electronic circuits. This component integrates two independent N-channel enhancement-mode MOSFETs within a single compact SO-8 package, offering a space-saving solution for modern, densely-packed PCB designs.
Engineered with Infineon's advanced technology, this MOSFET is characterised by a robust 55V drain-source voltage (Vds) rating and a continuous drain current (Id) capability of 4.7A per channel. Its low on-state resistance (Rds(on)) of just 0.043 ohm minimises conduction losses, leading to higher efficiency and reduced heat generation in applications such as DC-DC converters, motor drives, and load switches.
The device features a standard 8-pin SO-8 (Small Outline) surface-mount package, ensuring compatibility with automated assembly processes and facilitating reliable soldering. With a maximum power dissipation of 2W and an operating temperature range extending up to 150°C, it is built to maintain stable performance under challenging thermal conditions. This makes it an ideal choice for automotive, industrial, and consumer electronics where reliability and efficiency are paramount.
- DC-DC power converters
- Motor control and drive circuits
- Power management subsystems
- Load switching applications
- Channel Type: Dual N-Channel
- Drain-Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 4.7A
- Drain-Source On-State Resistance (Rds(on)): 0.043 ohm
- Transistor Case Style: SO-8
- Number of Pins: 8
- Power Dissipation: 2W
- Maximum Operating Temperature: 150°C
- Product Series: HEXFET
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Continuous Drain Current Id N Channel: 4.7A
- Drain Source On State Resistance N Channel: 0.043ohm
- of Pins: 8Pins
- Power Dissipation N Channel: 2W
- Operating Temperature Max: 150°C
- Product Range: HEXFET Series
- SVHC: No SVHC (25-Jun-2025)
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