VISHAY P-Channel Power MOSFET TO-263 (D2PAK) - 100 90
High-power P-channel MOSFET, 100V, 90A, low 0.019ohm Rds(on). TO-263 (D2PAK) surface-mount package for power management.
The VISHAY P-Channel Power MOSFET is a high-performance electronic component designed for demanding power management applications. It utilises a P-channel TrenchFET® technology, offering enhanced efficiency and reliability in switching and control circuits. This surface-mount device is engineered to handle significant current and voltage levels, making it an excellent choice for modern power conversion systems.
With its robust TO-263 (D2PAK) package, this MOSFET provides a reliable thermal and electrical interface, ensuring stable operation under high-power conditions. The component is specified for a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 90A, enabling it to manage substantial power loads. The low drain-source on-state resistance (Rds(on)) of 0.019ohm minimises conduction losses, leading to improved overall system efficiency and reduced heat generation.
This MOSFET is suitable for a wide array of power management tasks, including but not limited to DC-DC converters, motor drives, power supplies, and load switching applications. Its high power dissipation rating of 375W and a maximum operating temperature of 175°C allow it to perform reliably in challenging environments. The device features a standard 3-pin configuration and is designed for automated surface-mount assembly, facilitating high-volume production.
Engineers and designers will appreciate the combination of high current capability, low on-resistance, and the durability of the TO-263 package. This makes the VISHAY MOSFET a dependable component for enhancing the performance and efficiency of power electronic designs across industrial, automotive, and consumer electronics sectors.
Variant Details
- Size: 100 90
- Power Management Systems
- DC-DC Converters
- Motor Drive Circuits
- Switch-Mode Power Supplies (SMPS)
- Channel Type: P Channel
- Drain Source Voltage (Vds): 100 V
- Continuous Drain Current (Id): 90 A
- Drain Source On-State Resistance (Rds(on)): 0.019 ohm
- Test Voltage for Rds(on): 10 V
- Gate Source Threshold Voltage (Max): 3 V
- Maximum Power Dissipation: 375 W
- Package / Case Style: TO-263 (D2PAK)
- Mounting Type: Surface Mount
- Number of Pins: 3
- Maximum Operating Temperature: 175°C
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Weight: 2.302 grams
- Drain Source On State Resistance: 0.019ohm
- Transistor Case Style: TO-263 (D2PAK)
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Power Dissipation: 375W
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- SVHC: Lead (04-Feb-2026)
Documents
Always follow local regulations and product guidance.
Free standard delivery on UK mainland orders. Express delivery options and international shipping available at checkout.
We offer a 30-day money-back guarantee on most products. For faulty items, contact us within 14 days for a replacement or refund.
View Full Delivery & Returns PolicySecure Transactions
We take the utmost care with your payment and personal details. Our website employs advanced encryption technology, including Secure Sockets Layer (SSL), to protect your information during transmission. You can verify a secure connection by looking for 'https' and a locked padlock in your browser.
Cookie Policy
Cookies enhance your shopping experience by keeping track of your basket and remembering you when you return. We also use banner advertising based on your browsing history to present products of potential interest.
Security Warning
Beware of phishing scams! We will never ask for personal details via email. If such information is required, we'll request you to contact us by phone. If you receive an email requesting sensitive information, do not respond and let us know immediately.
You may like
