VISHAY P-Channel Power MOSFET TO-263 (D2PAK) - 60 55
High-power P-channel MOSFET, 100V, 90A, low 0.019ohm Rds(on). TO-263 (D2PAK) surface-mount package for power management.
The VISHAY P-Channel Power MOSFET is a high-performance electronic component designed for demanding power management applications. It utilises a P-channel TrenchFET® technology, offering enhanced efficiency and reliability in switching and control circuits. This surface-mount device is engineered to handle significant current and voltage levels, making it an excellent choice for modern power conversion systems.
With its robust TO-263 (D2PAK) package, this MOSFET provides a reliable thermal and electrical interface, ensuring stable operation under high-power conditions. The component is specified for a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 90A, enabling it to manage substantial power loads. The low drain-source on-state resistance (Rds(on)) of 0.019ohm minimises conduction losses, leading to improved overall system efficiency and reduced heat generation.
This MOSFET is suitable for a wide array of power management tasks, including but not limited to DC-DC converters, motor drives, power supplies, and load switching applications. Its high power dissipation rating of 375W and a maximum operating temperature of 175°C allow it to perform reliably in challenging environments. The device features a standard 3-pin configuration and is designed for automated surface-mount assembly, facilitating high-volume production.
Engineers and designers will appreciate the combination of high current capability, low on-resistance, and the durability of the TO-263 package. This makes the VISHAY MOSFET a dependable component for enhancing the performance and efficiency of power electronic designs across industrial, automotive, and consumer electronics sectors.
Variant Details
- Size: 60 55
- For power management
- For power supplies
- For motor control systems
- For power conversion circuits
- Channel Type: P Channel
- Technology: TrenchFET®
- Drain Source Voltage Vds: 60V
- Continuous Drain Current Id: 55A
- Drain Source On State Resistance: 0.019 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1V
- Power Dissipation: 125W
- Transistor Case Style: TO-263 (D2PAK)
- Transistor Mounting: Surface Mount
- No. of Pins: 3 Pins
- Operating Temperature Max: 175°C
- Weight: 2.152 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 3Pins
- SVHC: Lead (04-Feb-2026)
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