
Onsemi NPN bipolar transistor in SOT-23 surface-mount package, 45V VCEO, 100mA IC, 225mW PD. AEC-Q101 qualified.
The Onsemi NPN Bipolar (BJT) Single Transistor is a surface-mount device with a 45V collector-emitter voltage, housed in a compact SOT-23 three-pin package. It is suited to switching and amplification applications in space-constrained electronic circuits and PCB designs.
Overview
The transistor features a collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100mA, supporting low-power switching tasks. Power dissipation (PD) is rated at 225mW, and the transition frequency (ft) of 100MHz supports high-frequency operation for signal processing and driver circuits. The DC current gain (hFE) is 200, and the operating temperature range extends up to +150°C.
Key Features
Applications
Suitable for power management systems, audio amplifiers, and switching regulators, as well as signal processing and driver circuits.
Dimensions and Weight
Width: 3.3, Depth: 1.5, Height: 4.3. Product weight is 0.002 gm.
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