Onsemi NPN Bipolar BJT Transistor SOT-23 Surface Mount 65V

The Onsemi NPN Bipolar (BJT) Single Transistor is a surface-mount device with a 45V collector-emitter voltage and a 100mA continuous collector current, housed in a compact SOT-23 package with three pins.

Overview

This transistor is designed for switching and amplification applications and suits space-constrained electronic circuits and modern PCB designs. It has a power dissipation of 225mW and a transition frequency of 100MHz, supporting high-frequency operation for signal processing and driver circuits. The DC current gain (hFE) is 200, and the operating temperature range extends up to +150°C, allowing use in demanding thermal environments. This listing is specified with a 65V variant.

Key Features

• NPN polarity with a DC current gain (hFE) of 200
• Collector-emitter voltage (VCEO) of 45V and continuous collector current (IC) of 100mA
• Power dissipation (PD) of 225mW
• Transition frequency (ft) of 100MHz
• Operating temperature range up to +150°C
• Surface-mount configuration with SOT-23 case style and three pins
• AEC-Q101 qualified for automotive and industrial applications

Applications

Suitable for power management systems, audio amplifiers, switching regulators, low-power switching tasks, signal processing, and driver circuits. The surface-mount configuration suits automated assembly, and the SOT-23 case style is widely recognised and easy to integrate into existing designs.

Choose the Onsemi NPN Bipolar (BJT) Single Transistor when your design requires a compact, three-pin NPN transistor in an SOT-23 surface-mount package with a 45V collector-emitter voltage rating.