STMicroelectronics BDX53C NPN Darlington Transistor TO-220 Package

The STMicroelectronics BDX53C is an NPN Darlington transistor rated at 100V collector-to-emitter voltage and 8A continuous collector current, supplied in a TO-220 package.

Overview

The BDX53C is a complementary power Darlington transistor housed in a TO-220 package designed for through-hole mounting. It is manufactured using planar base island technology with a monolithic Darlington configuration. The device is designed to offer a high DC current gain (hFE) and a high fT frequency, making it suitable for both linear and switching operations.

Key Specifications

• Collector-to-emitter voltage (Vce): 100V
• Continuous collector current (Ic): 8A
• Power dissipation (Pd): 60W
• Collector-to-emitter saturation voltage: 2V at 3A collector current
• DC current gain (hFE): 750 at 3A
• Operating junction temperature: up to 150°C
• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 2 gm

Performance Notes

The rated continuous collector current of 8A and power dissipation of 60W allow the transistor to handle significant power loads. The low collector-to-emitter saturation voltage of 2V at 3A is intended to support efficiency and reduced power loss in switching applications. The wide operating junction temperature range, extending up to 150°C, allows operation in environments with elevated thermal conditions.

Applications

• Linear and switching operations
• Power management solutions
• Audio amplification circuits
• Industrial equipment and industrial control systems
• Consumer electronics and portable devices

Choose the STMicroelectronics BDX53C when a through-hole Darlington transistor with a 100V Vce rating and 8A collector current is required for linear, switching or power management designs.