ONSEMI N-Channel Power MOSFET, 60V, 300mA, 2 Ohm, SOT-23, SMD
ONSEMI N-channel power MOSFET, 60V, 300mA, 2 Ohm in SOT-23 SMD package. Ideal for power management and motor drive control.
This ONSEMI N-Channel Power MOSFET is an enhancement mode field effect transistor designed for efficient electronic switching and amplification. It features low on-state resistance, a low gate threshold voltage, low input capacitance, and fast switching speeds, making it highly effective for applications requiring rapid and reliable performance.
The device offers low input and output leakage, alongside a ±20V gate-source voltage rating, ensuring stable operation in various circuit configurations. Packaged in a compact SOT-23 surface mount (SMD) case style, it is suitable for high-density printed circuit board assemblies where space is at a premium.
With a maximum continuous drain current of 300mA and a drain-source voltage of 60V, this transistor is well-suited for power management and motor drive control applications. It can operate at temperatures up to 150°C, providing robust performance in demanding environments.
Key Specifications
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 300mA
- Drain Source On State Resistance: 2 Ohm
- Power Dissipation: 350mW
- Gate Source Threshold Voltage Max: 2.5V
- No. of Pins: 3
The product dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 0.181 grams, facilitating easy integration into automated manufacturing processes.
- Channel Type: N Channel
- Drain Source Voltage Vds: 60V
- Continuous Drain Current Id: 300mA
- Drain Source On State Resistance: 2 Ohm
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 2.5V
- Gate-source voltage: ±20V
- Power Dissipation: 350mW
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.181 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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