ONSEMI - Bipolar (BJT) Single Transistor, PNP, -500mA, 225mW, SOT-23 - -80V
Buy ONSEMI PNP transistor in SOT-23 package. -150V, -500mA, 225mW. AEC-Q101 qualified for industrial & automotive use.
The ONSEMI MMBT5401LT1G is a PNP high-voltage bipolar junction transistor, engineered for general-purpose switching applications. This surface-mount device is housed in a compact SOT-23 package, optimised for lower power dissipation in space-constrained circuit designs. With a collector-emitter voltage rating of -150V and a continuous collector current of -500mA, it delivers reliable performance in a variety of industrial, power management, and automotive applications.
This transistor meets the stringent requirements of AEC-Q101 qualification, ensuring robust reliability for automotive environments, and is PPAP capable, making it suitable for high-volume production. The halogen-free construction aligns with modern environmental standards, while the surface-mount SOT-23 footprint facilitates automated assembly and efficient use of PCB space.
Key Features:
- PNP polarity for complementing NPN transistor circuits
- -150V collector-emitter voltage (V(br)ceo) for high-voltage switching
- -500mA continuous collector current for moderate power loads
- 225mW power dissipation for low-power surface-mount applications
- 300MHz transition frequency for high-speed switching
- AEC-Q101 qualified and PPAP capable for automotive and industrial use
- Halogen-free construction (environmentally friendly)
The ONSEMI MMBT5401LT1G is designed for engineers seeking a dependable, high-voltage transistor in a compact, industry-standard package. Its combination of high voltage capability, moderate current handling, and fast switching speed makes it a versatile choice for a wide range of electronic circuits.
Variant Details
- Size: -80V
- Industrial control systems
- Power management circuits
- Automotive electronics
- General-purpose switching and amplification applications
- Transistor Polarity: PNP
- Collector-Emitter Voltage (V(br)ceo): 80V
- Collector-Emitter Voltage Max: 80V
- Continuous Collector Current: 500mA
- DC Collector Current: 500mA
- Power Dissipation: 225mW
- Transition Frequency: 50MHz
- DC Current Gain (hFE): 50hFE (min)
- Operating Temperature Max: 150°C
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3
- Product Range: MMBTxxxx
- AEC-Q101 Qualified and PPAP Capable
- Weight: 0.031 grams
- of Pins: 3Pins
- DC Current Gain hFE Min: 50hFE
- Qualification: AEC-Q101
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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