ONSEMI Bipolar (BJT) Single NPN Transistor, SOT-23, SMD - 80V

The ONSEMI Bipolar Junction Transistor (BJT) is a high-performance NPN transistor designed for a wide range of amplification and switching applications in modern electronics. Encased in a compact SOT-23 surface-mount device (SMD) package, it is perfectly suited for automated assembly processes and space-constrained printed circuit board (PCB) designs. This reliable component from the MMBTxxxx series offers excellent electrical characteristics for robust circuit performance.

Featuring a continuous collector current rating of 500mA, this transistor is capable of handling moderate power loads efficiently. Its high collector-emitter voltage (V_CE) of 80V minimum provides a substantial safety margin for various circuit configurations, enhancing overall system reliability. The device also boasts a high DC current gain (h_FE) of 100 minimum, ensuring strong signal amplification with minimal base current requirement.

Engineered for stability, the transistor has a total power dissipation of 225mW on an FR-5 board at 25°C, with a thermal resistance (junction-to-ambient) of 556°C/W maximum. Its wide operating temperature range of -55°C to +150°C allows for deployment in challenging environments, from industrial controls to automotive electronics. The component meets stringent electrostatic discharge (ESD) protection standards, including Human Body Model (HBM) Class 3B, Machine Model (MM) Class C, and Charged Device Model (CDM) Class IV, safeguarding against potential damage during handling and operation.

With a transition frequency (f_T) of 100MHz minimum, this transistor supports high-frequency applications, making it ideal for RF stages, oscillator circuits, and fast digital switching. Its three-pin SOT-23 package ensures easy integration and reliable soldering connections. This ONSEMI transistor is a fundamental, high-quality building block for designers seeking a dependable and versatile active component.

Variant Details

• Size: 80V