ONSEMI BC847BLT1G Bipolar (BJT) Single Transistor, General Purpose, NPN, 100mA, - 65V

The ONSEMI BC847BLT1G is a general purpose NPN silicon bipolar junction transistor (BJT) designed for use in a wide range of linear and switching applications. This SMD transistor is housed in a compact SOT-23 package, making it suitable for space-constrained circuit designs. With a collector-emitter voltage rating of 45V and a continuous collector current of 100mA, it provides reliable performance for signal amplification and low-power switching tasks. The device offers an ESD rating of over 4000V (Human Body Model) and over 400V (Machine Model), ensuring robustness in handling and operation. Additionally, it features built-in inductive load protection, steering logic, and polarity reversal protection, enhancing its versatility and safety in various circuit configurations. The transistor delivers a transition frequency of 100MHz and a high DC current gain (hFE) of 450, ensuring efficient switching and amplification. It is qualified for surface mount assembly and operates reliably at temperatures up to 150°C. Ideal for audio amplification, industrial control circuits, and general electronic devices, this ONSEMI transistor is a dependable choice for designers seeking a high-performance, general-purpose BJT.

Variant Details

• Size: 65V