ONSEMI Bipolar (BJT) Single Transistor, NPN, 100mA, 300mW, SOT-23, SMD - 65V

The ONSEMI Bipolar (BJT) Single Transistor is a high-quality NPN silicon transistor designed for a wide range of linear and switching applications. This surface mount device (SMD) is engineered for lower power applications, offering reliable performance in a compact SOT-23 package. With a collector-emitter voltage of 45V and a continuous collector current of 100mA, this transistor is ideal for various electronic circuits where space and efficiency are key.

This versatile component is halogen-free and BFR-free, meeting modern environmental standards. It features an excellent ESD rating of over 4000V (human body model) and over 400V (machine model), ensuring robust protection against electrostatic discharge. Suitable for ESD protection, polarity reversal protection, and data line protection, this transistor enhances the safety and reliability of your electronic designs.

Key Specifications

• Transistor Polarity: NPN
• Collector Emitter Voltage Max: 45V
• Continuous Collector Current: 100mA
• Power Dissipation: 300mW
• Transistor Case Style: SOT-23
• Transition Frequency: 100MHz
• DC Current Gain (hFE): 100
• Operating Temperature Max: 150°C
• Qualification: AEC-Q101

Ideal for industrial, power management, and safety applications, this transistor offers a perfect balance of performance and durability. Its compact SOT-23 package is suitable for automated assembly, making it a popular choice for modern electronic manufacturing. Trust ONSEMI for dependable, high-performance semiconductor components.

Variant Details

• Size: 65V