ONSEMI 2N4923G NPN Silicon Power Transistor, TO-126, 3A

The ONSEMI 2N4923G is a robust, medium-power NPN silicon transistor engineered for demanding electronic applications. It combines high current handling with a low saturation voltage, making it an efficient choice for switching and driver circuits where power loss needs to be minimised.

Featuring a thermopad construction, this component offers excellent power dissipation and a superior safe operating area (SOA), ensuring reliable performance even under stressful thermal conditions. It is the ideal complement to the PNP 2N4920G transistor for complementary push-pull amplifier designs.

Key Features & Applications

• Versatile Driver: Perfect for driving relays, motors, solenoids, and other inductive loads in control systems.
• Switching Applications: Its low saturation voltage makes it highly efficient for high-speed switching in power supplies and converters.
• Amplifier Use: Suitable for audio and general-purpose amplification stages in industrial equipment.
• Robust Construction: The TO-126 (TO-225) through-hole package provides a sturdy mechanical footprint and facilitates efficient heat transfer to a heatsink when required.

Technical Specifications

• Transistor Type: NPN Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage (V_CE): 80V
• Continuous Collector Current (I_C): 3A
• Maximum Power Dissipation (P_D): 30W
• DC Current Gain (h_FE Min): 3
• Transition Frequency (f_T): 3MHz
• Maximum Operating Temperature: 150°C
• Package / Case Style: TO-126 (TO-225)
• Mounting Type: Through Hole
• Pin Count: 3 Pins

With its proven reliability from the ONSEMI 2NXXXX series, this transistor is a trusted component for industrial control, power management systems, and various electronic designs.