INFINEON Power MOSFET, N Channel, 100V, TO-220AB, Through Hole - 36
High-current 36A INFINEON Power MOSFET with low 0.044ohm Rds(on). Logic-level gate drive, TO-220AB package for efficient power management.
The INFINEON Power MOSFET is a high-performance, N-channel HEXFET® device engineered for superior power management and switching efficiency. Featuring an extremely low on-resistance per silicon area, this component minimises power losses and heat generation, making it ideal for demanding applications where energy efficiency is critical. Its fast switching performance, combined with the renowned ruggedised design of the HEXFET platform, provides designers with a robust and reliable solution for a wide variety of circuits.
This fully avalanche-rated MOSFET is built with advanced process technology and features a logic-level gate drive, simplifying integration with modern microcontrollers and digital systems without the need for additional driver circuitry. Its dynamic dv/dt rating ensures stability and protection in high-speed switching environments, enhancing the overall durability and lifespan of your electronic designs.
Housed in the industry-standard TO-220AB package with through-hole mounting, it offers excellent thermal performance and is easy to install on printed circuit boards. The device is capable of handling significant continuous current and power dissipation, making it a versatile choice for power supplies, motor control, DC-DC converters, and amplification stages.
With its high maximum operating temperature and robust construction, this MOSFET delivers consistent, long-term performance even in challenging conditions. It is a fundamental component for engineers and hobbyists looking to build efficient, powerful, and reliable electronic systems.
Variant Details
- Size: 36
- Power Management Systems
- Switching Power Supplies (SMPS)
- Motor Control Circuits
- DC-DC Converters
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 100 V
- Continuous Drain Current (Id): 36 A
- Drain-Source On-State Resistance (Rds(on)): 0.044 ohm
- Test Voltage for Rds(on): 10 V
- Gate-Source Threshold Voltage (Max): 2 V
- Maximum Power Dissipation: 140 W
- Transistor Mounting: Through Hole
- Package Type: TO-220AB
- Number of Pins: 3 Pins
- Maximum Operating Temperature: 175°C
- Weight: 2 grams
- Dimensions (H x W x D): 43 mm x 33 mm x 15 mm
- Technology: HEXFET® with Advanced Process
- Special Feature: Fully Avalanche Rated
- Special Feature: Logic-Level Gate Drive
- Special Feature: Dynamic dv/dt Rating
- Advanced process technology Channel Type: N Channel
- Drain Source On State Resistance: 0.044ohm
- Rds(on) Test Voltage: 10V
- Power Dissipation: 140W
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- SVHC: No SVHC (25-Jun-2025)
Documents
Always follow local regulations and product guidance.
Free standard delivery on UK mainland orders. Express delivery options and international shipping available at checkout.
We offer a 30-day money-back guarantee on most products. For faulty items, contact us within 14 days for a replacement or refund.
View Full Delivery & Returns PolicySecure Transactions
We take the utmost care with your payment and personal details. Our website employs advanced encryption technology, including Secure Sockets Layer (SSL), to protect your information during transmission. You can verify a secure connection by looking for 'https' and a locked padlock in your browser.
Cookie Policy
Cookies enhance your shopping experience by keeping track of your basket and remembering you when you return. We also use banner advertising based on your browsing history to present products of potential interest.
Security Warning
Beware of phishing scams! We will never ask for personal details via email. If such information is required, we'll request you to contact us by phone. If you receive an email requesting sensitive information, do not respond and let us know immediately.
You may like
