DIODES INC. Bipolar (BJT) Single Transistor, PNP, 625mW, SOT-23, SMD - 100V 1A

The DIODES INC. Bipolar (BJT) Single Transistor is a high-performance PNP silicon power switching transistor designed for demanding power management and industrial applications. With a power dissipation of 625mW and extremely low saturation voltage, this SMD transistor delivers efficient and reliable switching performance.

Featuring excellent hFE characteristics up to 10A, this transistor ensures consistent current gain across a wide range of operating conditions. It also exhibits extremely low equivalent on resistance, minimizing power losses and enhancing overall circuit efficiency.

The transistor is capable of handling a 10A peak pulse current, making it suitable for applications requiring high surge current capability. Its compact SOT-23 package and surface mount design facilitate easy integration into modern PCB layouts, saving valuable board space.

The device operates over a temperature range of -55°C to 150°C, ensuring stable performance in demanding environments. The NPN complement is the FMMT618, providing design flexibility for complementary circuit configurations.

Key Specifications:

• Transistor Polarity: PNP
• Collector Emitter Voltage Max: 20V
• DC Collector Current: 1.5A
• Power Dissipation: 625mW
• Transistor Case Style: SOT-23
• Mounting: Surface Mount
• No. of Pins: 3
• Transition Frequency: 180MHz

This transistor is an ideal choice for power management, industrial control, and switching applications where high efficiency and reliability are paramount.

Variant Details

• Size: 100V 1A