Diodes ZXMP4A16K P-Channel MOSFET 40V 9.9A TO-252 (DPAK)

Diodes ZXMP4A16K P-Channel MOSFET 40V 9.9A is a trench P-channel enhancement-mode MOSFET rated at a 40V drain-source voltage and 9.9A maximum continuous drain current, housed in a TO-252 (DPAK) surface-mount package.

Overview

The ZXMP4A16K from Diodes Inc. is built on a trench P-channel enhancement-mode architecture. It combines low drain-source on-state resistance with fast switching performance, making it suitable for applications that require efficient power switching and low-voltage control. Its low threshold voltage and minimal gate drive requirement simplify circuit design and reduce the complexity of the driving circuitry.

Key Features

• Low drain-source on-state resistance (RDS(on)) of 0.06 ohm, which reduces conduction losses
• Fast switching speed, which reduces power losses during state transitions and suits high-frequency power conversion
• Low gate-source threshold and drive requirements for integration with low-voltage logic and microcontrollers
• TO-252 (DPAK) surface-mount package for automated assembly, with power dissipation rated up to 9.5W
• MSL 1 (Unlimited) moisture sensitivity level

Specifications

• Maximum continuous drain current: 9.9A
• Drain-source voltage: 40V
• Weight: 306 gm

Applications

Typical applications include DC-DC converters, switch-mode power supplies (SMPS), power management units in computing and consumer electronics, and motor drive control circuits.

Choose the ZXMP4A16K when a 40V P-channel MOSFET in a DPAK surface-mount package is required for efficient power switching in compact designs.