VISHAY SUM110P08 P-Channel Power MOSFET, 80V 110A, D2PAK

The VISHAY SUM110P08-11L-E3 is a high-performance P-channel TrenchFET® Power MOSFET designed for demanding industrial applications. Engineered with advanced technology, it delivers efficient power switching with an exceptionally low on-state resistance of just 0.0112 ohm, minimising power loss and heat generation during operation.

This robust component can handle a continuous drain current of 110A and a drain-source voltage of 80V, making it suitable for high-current circuits. Its maximum operating temperature of 175°C ensures reliable performance in challenging thermal environments. The device is housed in a TO-263 (D2PAK) surface-mount package, a widely used format that offers a good balance of power handling and ease of assembly on printed circuit boards (PCBs).

With a gate-source threshold voltage maximum of 3V and a test voltage of 10V for Rds(on), it provides stable switching characteristics. The high power dissipation rating of 375W underscores its capability to manage significant thermal loads. Its compact surface-mount design saves valuable board space in modern electronic assemblies, from power supplies and motor controls to battery management systems.

Key Specifications

• Technology: TrenchFET® Power MOSFET
• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 80V
• Continuous Drain Current (Id): 110A
• Drain-Source On-State Resistance (Rds(on)): 0.0112 ohm
• Maximum Gate-Source Threshold Voltage: 3V
• Maximum Operating Temperature: 175°C
• Power Dissipation: 375W
• Package: TO-263 (D2PAK), Surface Mount
• Pin Count: 3 Pins

This MOSFET is a dependable choice for engineers seeking a efficient, high-current switching solution with proven reliability from the VISHAY brand.