VISHAY P-Channel Power MOSFET 60V 50A TO-252

VISHAY P-Channel Power MOSFET 60V 50A is a P-channel TrenchFET power MOSFET with a 60V drain-source voltage and a 50A continuous drain current rating. Its low drain-source on-state resistance of 0.015 ohm at 10V helps minimise power loss and heat generation, making it suited to high-efficiency power management and load switching applications.

Overview

The component is designed for demanding industrial environments where performance and reliability are critical. Its primary application is as a load switch, where the low Rds(on) ensures minimal voltage drop when the device is fully activated. This allows it to control high-current loads with reduced voltage loss across the switch.

Package and Mounting

The MOSFET is housed in a compact, industry-standard TO-252 (DPAK) surface-mount package, supporting streamlined PCB integration and efficient thermal management. Overall dimensions are 33 mm (width) x 43 mm (height) x 15 mm (depth).

Electrical Ratings

• Channel type: P-Channel
• Drain-source voltage (Vds): 60V
• Continuous drain current (Id): 50A
• Drain-source on-state resistance (Rds(on)): 0.015 ohm @ 10V
• Gate-source voltage (Vgs): ±20V
• Gate threshold voltage max: 3V
• Maximum power dissipation: 2.5W
• Maximum operating temperature: 150°C

Applications

The device is suitable for controlling high-current loads in power supplies, motor drives, battery management systems, and industrial automation equipment. The ±20V gate-source voltage rating offers flexibility in drive circuit design.

The VISHAY P-Channel Power MOSFET 60V 50A in TO-252 (DPAK) format is a practical choice for load switching designs that require a compact surface-mount device with defined voltage, current and thermal ratings.