VISHAY SOT-23 N-Channel MOSFET Transistor, 40V 8A
Automotive-grade VISHAY N-Channel MOSFET. 40V, 8A, low Rds(on) in SOT-23 package. AEC-Q101 qualified for reliable power switching.
The VISHAY TrenchFET® Power MOSFET is a high-performance, AEC-Q101 qualified component designed for demanding automotive and general electronic applications. This N-Channel MOSFET features a robust trench technology construction, delivering efficient power switching with low on-state resistance.
Engineered for reliability, every unit undergoes 100% Rg (Gate Resistance) and UIS (Unclamped Inductive Switching) testing, ensuring consistent performance and durability in circuit designs. With a continuous drain current rating of 8A and a drain-source voltage of 40V, it is capable of handling significant power loads in a compact footprint.
Key Features & Benefits
- Automotive Grade: AEC-Q101 qualification confirms its suitability for use in automotive environments, meeting stringent quality and reliability standards.
- Low Power Loss: An exceptionally low drain-source on-state resistance (Rds(on)) of just 0.031Ω at 10V minimises conduction losses, improving overall system efficiency.
- Compact SMD Package: Housed in a space-saving SOT-23 surface-mount package, it is ideal for high-density PCB designs where board real estate is at a premium.
- Wide Operating Range: Capable of operating at temperatures up to 175°C, making it resilient in high-temperature applications.
- Ease of Drive: A maximum gate-source threshold voltage of 2V allows for easy interfacing with low-voltage logic and microcontroller outputs.
This 3-pin transistor is a reliable choice for designers seeking a proven, high-efficiency switching solution for power management, motor control, and load driving circuits.
- Automotive electronic systems
- Power switching circuits
- Motor control applications
- DC-DC converter designs
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 40V
- Continuous Drain Current (Id): 8A
- Drain-Source On-State Resistance (Rds(on)): 0.031Ω @ 10V
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Gate-Source Threshold Voltage (Max): 2V
- Power Dissipation: 3.3W
- Number of Pins: 3 Pins
- Operating Temperature Max: 175°C
- Product Range: TrenchFET
- Qualification: AEC-Q101
- Technology: TrenchFET® Power MOSFET
- Testing: 100% Rg and UIS Tested
- Weight: 0.156 grams
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Drain Source On State Resistance: 0.031ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: No SVHC (04-Feb-2026)
Documents
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