VISHAY SMD P-Channel Power MOSFET, 20V, 5.9A, SOT-23
VISHAY TrenchFET® P-Channel Power MOSFET, 20V, 5.9A. Low Rds(on), SOT-23 package for load switches & DC/DC converters.
The VISHAY SMD P-Channel Power MOSFET is a high-performance semiconductor device engineered for efficient power management in modern, space-constrained applications. Built on the advanced TrenchFET® technology platform, it delivers low on-state resistance for minimal power loss and high current-handling capability in a compact SOT-23 surface-mount package.
This component is 100% Rg tested to ensure consistent performance and reliability, while the built-in ESD protection offers a typical electrostatic discharge performance of 3000V, safeguarding the device during handling and assembly.
Key Features & Applications
Ideal for portable and consumer electronics, this MOSFET excels in roles such as load switches and DC/DC converters, where efficient power switching and compact size are paramount. Its robust design supports a wide operating temperature range, making it suitable for demanding environments.
Technical Specifications
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): 20V
- Continuous Drain Current (Id): 5.9A
- Drain-Source On-State Resistance (Rds(on)): 0.032 ohm (tested at 4.5V)
- Gate-Source Threshold Voltage (Max): 1V
- Maximum Power Dissipation: 1.7W
- Package / Case Style: SOT-23 (Surface Mount)
- Number of Pins: 3
- Maximum Operating Temperature: 150°C
- Product Technology: TrenchFET® Power MOSFET
This reliable VISHAY MOSFET provides engineers and designers with a trusted solution for enhancing power efficiency and circuit protection in a multitude of electronic designs.
- Power management applications
- Portable electronic devices
- Consumer electronics
- Load switches
- Channel Type: P Channel
- Drain-Source Voltage (Vds): 20V
- Continuous Drain Current (Id): 5.9A
- Drain-Source On-State Resistance (Rds(on)): 0.032 ohm
- Rds(on) Test Voltage: 4.5V
- Gate-Source Threshold Voltage (Max): 1V
- Maximum Power Dissipation: 1.7W
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Number of Pins: 3
- Maximum Operating Temperature: 150°C
- Product Technology: TrenchFET® Power MOSFET
- Quality Assurance: 100% Rg Tested
- ESD Protection: Typical Performance 3000V
- Package Dimensions (approx.): 33mm (W) x 43mm (H) x 15mm (D)
- Weight: 0.454 grams
- Drain Source On State Resistance: 0.032ohm
- Power Dissipation: 1.7W
- of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET
- SVHC: No SVHC (04-Feb-2026)
Documents
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