VISHAY SMD Dual P-Channel MOSFET Transistor 30V 8A SOIC-8

VISHAY SMD Dual P-Channel MOSFET Transistor offers a 30V drain-source voltage rating and a continuous drain current of 8A in a compact surface-mount SOIC-8 package.

This dual P-channel TrenchFET power MOSFET is designed for power management and load switching in space-constrained electronics. It uses a LITTLE FOOT package, which provides thermal transfer capability within a compact, modified small-signal footprint. Its low drain-source on-state resistance helps minimise power loss when the device operates as a high-efficiency switch.

Key Features

• Dual P-channel configuration with 30V drain-source voltage (Vds)
• Continuous drain current (Id) of 8A
• Low drain-source on-state resistance (Rds(on)) of 0.024 ohm
• Surface-mount SOIC case style with 8 pins
• Maximum power dissipation of 5W
• Halogen-free, complying with IEC 61249-2-21
• 100% UIS (Unclamped Inductive Switching) tested

Dimensions and Weight

• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 0.5 gm

Applications

The transistor is intended for integration into a wide range of consumer and computer electronics. It is suited to load switching for power rails, power management and battery charging circuits, and voltage regulation in notebook and desktop PCs, along with gaming stations, computer peripherals and general consumer electronics that require a compact dual P-channel power switch.