VISHAY SI7461DP P-Channel Power MOSFET, -60V, 8.6A
VISHAY -60V P-channel MOSFET with 0.0145 ohm RDS(on). PowerPAK SO package for efficient power management & DC/DC supplies.
The VISHAY SI7461DP-T1-GE3 is a high-performance P-channel TrenchFET® power MOSFET, engineered for demanding power management applications. It features a low drain-source on-state resistance of just 0.0145 ohm at a 10V gate drive, enabling highly efficient power switching with minimal conduction losses.
Housed in the compact PowerPAK® SO package, this device offers an excellent balance of small footprint, low thermal resistance, and a slim profile of only 1.07mm, making it ideal for space-constrained designs. The halogen-free construction complies with the IEC 61249-2-21 standard, supporting environmentally conscious manufacturing.
This MOSFET is specified for a continuous drain current of 8.6A and a drain-source voltage of -60V. With a maximum power dissipation of 1.9W and an operating temperature range extending up to 150°C, it is built for robust and reliable operation in challenging environments.
A key application for this component is as an active clamp in intermediate DC/DC power supplies, where its fast switching characteristics and low RDS(on) contribute to improved overall system efficiency and stability. Its surface-mount design facilitates automated assembly processes for high-volume production.
Key Specifications:
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): -60V
- Continuous Drain Current (Id): 8.6A
- Drain-Source On-State Resistance (RDS(on)): 0.0145 ohm @ 10V
- Gate-Source Threshold Voltage (Max): 3V
- Maximum Power Dissipation: 1.9W
- Package Type: PowerPAK SO (8-pin)
- Mounting Style: Surface Mount
- Maximum Operating Temperature: 150°C
- Package Height: 1.07mm
- Compliance: Halogen-free (IEC 61249-2-21)
- Active clamp circuits in intermediate DC/DC power supplies
- General power management and switching applications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 60 V
- Continuous Drain Current (Id): 8.6 A
- Drain Source On-State Resistance (RDS(on)): 0.0145 ohm @ 10V
- Gate Source Threshold Voltage (Max): 3 V
- Maximum Power Dissipation: 1.9 W
- Transistor Case Style: PowerPAK SO
- Number of Pins: 8
- Transistor Mounting: Surface Mount
- Operating Temperature Max: 150°C
- Package Profile: 1.07 mm
- Construction: Halogen-free (IEC 61249-2-21)
- Technology: TrenchFET®
- Drain Source On State Resistance: 0.0145ohm
- Rds(on) Test Voltage: 10V
- Power Dissipation: 1.9W
- of Pins: 8Pins
- SVHC: No SVHC (04-Feb-2026)
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