VISHAY P-Channel Power MOSFET 20V 3.1A SOT-23

VISHAY P-Channel Power MOSFET 20V 3.1A SOT-23 is a P-channel TrenchFET power MOSFET with a -20V minimum drain-source breakdown voltage and a -3.1A continuous drain current rating, designed for power management in compact electronic designs.

Overview

This P-channel MOSFET is designed for efficient power management in compact electronic designs. It is intended for load-switching applications where space and power efficiency are important. The device offers a low drain-source on-state resistance and switching characteristics suited to these tasks. It also has a low gate-source threshold voltage, which allows control with lower drive voltages and supports energy efficiency across the wider system.

Key Specifications

• On-state resistance (Rds(on)) of 0.112 ohms at a test voltage of 2.5V, which reduces conduction losses and heat generation
• Pulsed drain current of -10A
• Maximum power dissipation of 1.6W
• VDS temperature coefficient of -18mV/°C typical
• Forward transconductance of 9.5S typical
• Integral source-drain diode with a continuous diode current rating of -1.3A
• Surface-mount SOT-23 package
• Junction temperature range from -55°C to 150°C
• Dimensions (W x D x H): 3.3 x 1.5 x 4.3
• Product weight: 0.05 g

Applications

Primarily designed as a load switch, this MOSFET suits power management tasks in portable devices and battery-powered equipment. Its design focuses on reliable, repeatable performance for modern, miniaturised electronics. Choose the VISHAY P-Channel Power MOSFET 20V 3.1A SOT-23 when a compact P-channel device for load switching is required.