VISHAY SI1012CR-T1-GE3 20V N Channel MOSFET, SC-75A

The VISHAY SI1012CR-T1-GE3 is a high-performance, 20V drain-source voltage (Vds) N-channel enhancement-mode Power MOSFET. Manufactured using advanced TrenchFET® technology, this component delivers efficient and reliable switching for a wide range of electronic applications.

This MOSFET is designed for low-voltage switching tasks, featuring a continuous drain current of 630mA and a low on-state resistance of 0.33 ohms, ensuring minimal power loss and improved efficiency. It is 100% Rg tested and offers 1000V gate-source ESD protection, providing robust performance and durability in demanding environments.

The device is halogen-free, meeting modern environmental standards, and operates effectively across a broad temperature range up to 150°C. Housed in a compact SC-75A surface mount package, it is ideal for space-constrained PCB designs and is suitable for automated assembly processes.

Key Features:

• 20V Drain-Source Voltage (Vds) for low-voltage applications
• Continuous Drain Current of 630mA for reliable power handling
• Low On-State Resistance (0.33Ω) for enhanced efficiency
• 1.2V Rated Voltage for low-voltage drive capability
• 1000V Gate-Source ESD Protection for rugged operation
• Halogen-Free and RoHS compliant for environmental safety

Applications:

• Industrial power management
• Portable electronic devices
• Relay and solenoid drivers
• Lamp and display drivers

This MOSFET is an excellent choice for engineers seeking a dependable, high-quality switching solution for their electronic designs.