VISHAY Power MOSFET P-Channel 100V 13.2A PowerPAK 1212 SMD

The VISHAY P-Channel Power MOSFET is a 100 V, 13.2 A device housed in a PowerPAK 1212 surface-mount package. It is designed for power management applications and features TrenchFET technology for efficient switching.

Key Features

• TrenchFET power MOSFET technology for efficient switching
• Drain-source on-state resistance (Rds(on)) of 0.134 ohm at 4.5 V, helping to minimise power loss and heat generation
• PowerPAK 1212 package with a low profile of 1.07 mm, suited to space-constrained designs
• Rated for a maximum power dissipation of 52 W
• Device is UIS (Unclamped Inductive Switching) and gate resistance (Rg) tested
• Surface-mount package supporting high-density PCB layouts in power supplies and converters

Applications

This component is well suited for use as an active clamp in intermediate DC/DC power supplies, where fast switching and efficiency are important. It can also be used in other power switching and load switching circuits, as well as motor control circuits in industrial, automotive, and telecommunications equipment.

Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 13.2 A
• Drain-Source On-State Resistance (Rds(on)): 0.134 ohm @ 4.5 V
• Gate-Source Threshold Voltage (Max): 1 V
• Maximum Power Dissipation: 52 W
• Width: 3.3, Depth: 1.5, Height: 4.3
• Weight: 0.069 gm

The VISHAY P-Channel Power MOSFET suits designs requiring a 100 V, 13.2 A switching device in a compact surface-mount package.