Vishay P-Channel Power MOSFET, 60V 2.8A, SOT-23 SMD
AEC-Q101 automotive P-Channel Power MOSFET from Vishay. 60V, 2.8A, 0.177 ohm Rds(on) in compact SOT-23 SMD package.
The Vishay SQ series P-Channel Power MOSFET is a high-reliability, automotive-grade semiconductor designed for demanding applications. Manufactured on a dedicated, robust process flow, this AEC-Q101 qualified TrenchFET® technology component is engineered to offer exceptional ruggedness and performance in a compact surface-mount package.
Featuring a low drain-source on-state resistance (Rds(on)) of 0.177 ohm at 10V, it ensures efficient power switching with minimal loss. It is rated for a continuous drain current of 2.8A and a drain-source voltage of 60V, making it suitable for a variety of power management and control circuits. The device is built to withstand a maximum junction temperature of 175 °C, ensuring stable operation under high thermal stress.
Housed in a space-saving SOT-23 package, this MOSFET is part of Vishay's PowerPAK® family, which delivers thermal and electrical performance comparable to larger packages while saving valuable board space. It is supplied in a lead (Pb)- and halogen-free construction, aligning with modern environmental and safety standards.
Key Specifications & Features:
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): 60 V
- Continuous Drain Current (Id): 2.8 A
- Drain-Source On-State Resistance (Rds(on)): 0.177 ohm (@ Vgs=10V)
- Gate-Source Threshold Voltage (Vgs(th) Max): 2.5 V
- Maximum Power Dissipation: 2 W
- Package / Case Style: SOT-23
- Mounting Type: Surface Mount Device (SMD)
- Pin Count: 3 Pins
- Maximum Operating Temperature: +175 °C
- Technology: TrenchFET®
- Qualification: AEC-Q101 Automotive
- Construction: Lead- and Halogen-Free
Ideal for designers seeking a compact, reliable, and high-performance switching solution for automotive and industrial electronics.
- Automotive electronic control units (ECUs)
- Power management circuits
- DC-DC converter modules
- Load switching applications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 2.8A
- Drain Source On-State Resistance (Rds(on)): 0.177 ohm
- Gate Source Threshold Voltage Max: 2.5V
- Power Dissipation: 2W
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3 Pins
- Operating Temperature Max: 175°C
- Product Range: TrenchFET
- Qualification: AEC-Q101
- Construction: Lead (Pb)- and Halogen-Free
- Rds(on) Test Voltage: 10V
- Package Family: PowerPAK® / SQ Series
- Drain Source On State Resistance: 0.177ohm
- of Pins: 3Pins
- SVHC: No SVHC (04-Feb-2026)
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