VISHAY P Channel Power MOSFET 40V 7.2A SOIC
VISHAY P Channel TrenchFET power MOSFET, 40V, 7.2A, 0.045ohm in 8-pin SOIC. Ideal for load switches and notebook PCs.
The VISHAY P Channel Power MOSFET is a high-performance TrenchFET® device designed for efficient power management. Enclosed in an 8-pin SOIC package, this surface-mount transistor offers reliable switching capabilities with a drain-source voltage of 40V and a continuous drain current of 7.2A. Its low drain-source on-state resistance of 0.045ohm ensures minimal power loss and enhanced operational efficiency.
This MOSFET undergoes rigorous quality control, featuring 100% Rg testing and 100% UIS testing to guarantee consistent performance and robustness in demanding applications. The component operates effectively at a maximum temperature of 150°C, making it suitable for environments where thermal management is critical.
Key Specifications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 40V
- Continuous Drain Current (Id): 7.2A
- Drain Source On State Resistance: 0.045ohm
- Gate Source Threshold Voltage Max: 1.2V
- Power Dissipation: 4.2W
- Rds(on) Test Voltage: 10V
- No. of Pins: 8
- Transistor Case Style: SOIC
- Transistor Mounting: Surface Mount
Ideal for modern electronics, this VISHAY MOSFET provides a dependable solution for power routing and switching tasks.
- Channel Type: P Channel
- Drain Source Voltage (Vds): 40V
- Continuous Drain Current (Id): 7.2A
- Drain Source On State Resistance: 0.045ohm
- Transistor Case Style: SOIC
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.2V
- Power Dissipation: 4.2W
- No. of Pins: 8
- Operating Temperature Max: 150°C
- Weight: 0.138 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 8Pins
- SVHC: No SVHC (04-Feb-2026)
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