VISHAY P-Channel Power MOSFET 40V 16.1A SOIC
VISHAY 40V P-Channel Power MOSFET, 16.1A, 0.015Ω. Halogen-free, surface mount SOIC for industrial & power management.
The VISHAY SI4401DDY-T1-GE3 is a robust P-channel enhancement-mode Power MOSFET, engineered for high-performance load switching and point-of-load (POL) applications. Built on advanced TrenchFET® technology, it delivers low on-state resistance for efficient power management.
This component is rigorously tested, with 100% Rg (gate resistance) and 100% UIS (unclamped inductive switching) testing ensuring consistent quality and reliability. It is constructed with halogen-free materials, adhering to modern environmental standards, and is designed to operate across a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial environments.
With a high continuous drain current and low power dissipation, this MOSFET is an excellent choice for designers seeking to optimise efficiency and thermal performance in compact surface-mount designs. Its SOIC package is ideal for space-constrained PCBs while providing effective thermal characteristics.
Key Specifications:
- Drain-Source Voltage (Vds): 40 V
- Continuous Drain Current (Id): 16.1 A
- Drain-Source On-State Resistance (Rds(on)): 0.015 Ω (tested at 4.5V)
- Gate-Source Threshold Voltage (Max): 1.2 V
- Power Dissipation: 6.3 W
- Package / Case: SOIC
- Mounting Type: Surface Mount
- Pin Count: 8 Pins
- Operating Temperature Range: -55°C to 150°C
- Technology: Halogen-free TrenchFET®
- Industrial power management systems
- Load switch applications
- Point-of-load (POL) converters
- DC-DC power supplies
- Channel Type: P Channel
- Drain Source Voltage (Vds): 40 V
- Continuous Drain Current (Id): 16.1 A
- Drain Source On-State Resistance (Rds(on)): 0.015 Ω
- Rds(on) Test Voltage: 4.5 V
- Gate Source Threshold Voltage (Max): 1.2 V
- Power Dissipation: 6.3 W
- Transistor Case Style: SOIC
- Transistor Mounting: Surface Mount
- No. of Pins: 8 Pins
- Operating Temperature Range: -55°C to 150°C
- Technology: TrenchFET®
- Construction: Halogen-free
- Testing: 100% Rg and 100% UIS tested
- Weight: 0.295 grams
- Dimensions (L x W x H): 43 mm x 33 mm x 15 mm
- Drain Source On State Resistance: 0.015ohm
- of Pins: 8Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (04-Feb-2026)
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