VISHAY P-Channel Power MOSFET, 200V 3.5A TO-220AB
VISHAY P-Channel Power MOSFET, 200V 3.5A, 1.5ohm Rds(on). TO-220AB through-hole package for power switching and control.
The VISHAY P-Channel Power MOSFET is a robust and reliable semiconductor component designed for efficient switching and power management in a wide array of electronic circuits. Engineered with a 200V drain-source voltage (Vds) rating and a 3.5A continuous drain current (Id), this device is capable of handling moderate to high-power applications with stability and precision. Its defining characteristic is a low drain-source on-state resistance (Rds(on)) of just 1.5ohm (tested at 10V), which minimises power loss and heat generation during operation, leading to improved overall system efficiency.
Housed in the industry-standard TO-220AB through-hole package, this MOSFET offers excellent thermal performance and ease of mounting on printed circuit boards (PCBs). The package facilitates efficient heat dissipation, supported by a maximum power dissipation rating of 40W. With a gate-source threshold voltage maximum of 2V, it is well-suited for low-voltage drive circuits, making it compatible with many logic-level controllers and microprocessors.
Key Specifications & Features
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.5A
- On-State Resistance (Rds(on)): 1.5ohm @ 10V
- Package / Case: TO-220AB (Through-Hole)
- Power Dissipation: 40W
- Gate Threshold Voltage: 2V Max
- Pin Count: 3 Pins
- Operating Temperature: Up to 150°C
- Dimensions: 33mm (Width) x 43mm (Height) x 15mm (Depth)
This component is a fundamental building block for designers and engineers, providing a dependable solution for power conversion, motor control, load switching, and amplification tasks in industrial, automotive, and consumer electronics.
- Power supply units (PSUs)
- DC-DC converter circuits
- Motor drive and control systems
- High-side load switching
- Channel Type: P Channel
- Drain Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.5A
- Drain Source On-State Resistance (Rds(on)): 1.5ohm @ 10V
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Gate Source Threshold Voltage Max: 2V
- Power Dissipation: 40W
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Package Dimensions: 33mm (W) x 43mm (H) x 15mm (D)
- Weight: 10 grams
- Drain Source On State Resistance: 1.5ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: Lead (04-Feb-2026)
Documents
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