VISHAY P-Channel MOSFET 40V 4.1A SOT-23

The VISHAY P-Channel Power MOSFET delivers efficient switching performance in a compact SOT-23 surface-mount package. With a drain-source voltage of 40V and a continuous drain current of 4.1A, this transistor is designed for space-constrained applications requiring reliable power management. The MOSFET features a low drain-source on-state resistance of 0.094 ohms (at a test voltage of 10V), minimizing conduction losses and improving overall system efficiency.

Engineered with TrenchFET technology, this device offers fast switching and robust performance in a small footprint. It is qualified to AEC-Q101 standards, ensuring high reliability for automotive-grade applications. The component supports power dissipation up to 3.3W, with a maximum operating temperature of 175°C, making it suitable for demanding thermal environments.

This surface-mount MOSFET comes in a 3-pin SOT-23 package with an MSL rating of 1 (unlimited floor life), simplifying the assembly process. With a gate-source threshold voltage of up to 2V, it is compatible with low-voltage drive circuits. Ideal for power management, load switching, and portable electronics, the VISHAY P-Channel MOSFET combines performance and compact design for modern electronic systems.