VISHAY N Channel Power MOSFET, 500 V, 22 A, TO-247AC

The VISHAY N Channel Power MOSFET is an enhancement-mode device designed for industrial and power management applications. It features low gate charge, which simplifies drive requirements and enhances overall efficiency in demanding circuits.

This robust component offers improved gate, avalanche, and dynamic dV/dt ruggedness, ensuring reliable performance in challenging environments. It is fully characterised for capacitance and avalanche voltage and current, providing precise and predictable operation for critical systems.

With a maximum drain-source voltage of 500 V and a continuous drain current of 22 A, this Power MOSFET is well-suited for high-power configurations. The device possesses a drain-source on-state resistance of 0.23 ohm and can dissipate up to 277 W of power, balancing conductivity and thermal performance effectively.

The through-hole mounting style in a TO-247AC case ensures secure and stable installation on printed circuit boards. Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of just 6 grams, it offers a compact footprint for dense electronic assemblies. It operates efficiently up to a maximum temperature of 150°C, making it a versatile choice for various power management tasks.