VISHAY N Channel Power MOSFET, 500V, 20A, TO-247AC, 0.27 Ohm

The VISHAY N Channel Power MOSFET is a robust, high-performance power transistor designed for demanding electronic applications. Featuring an N-channel enhancement-mode construction, it offers a high drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 20A. This makes it suitable for switching and amplification in high-voltage circuits.

A key benefit is its exceptionally low drain-source on-state resistance (RDS(on)) of just 0.27ohm, tested at 10V. This low resistance minimises power loss and heat generation, enhancing overall system efficiency and reliability. The component boasts improved ruggedness in gate handling, avalanche energy tolerance, and dynamic dv/dt performance, ensuring stable operation under stressful conditions.

Housed in a sturdy, industry-standard TO-247AC through-hole package, it is designed for secure mounting on printed circuit boards (PCBs). It supports a high power dissipation of 280W and can operate at maximum junction temperatures up to 150°C, providing a wide safety margin for thermal management in power supplies, motor drives, and inverters.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 20A
• Drain-Source On-State Resistance (RDS(on)): 0.27Ω @ 10V
• Power Dissipation: 280W
• Package / Case: TO-247AC (Through Hole)
• Gate-Source Threshold Voltage (Max): 4V
• Operating Temperature Range (Max): 150°C
• Pin Count: 3 Pins

This VISHAY MOSFET is a reliable choice for engineers and hobbyists seeking a component that combines high voltage handling, efficient switching, and proven durability for power conversion tasks.