VISHAY N-Channel Power MOSFET 40V 3.9A TO-236

The VISHAY N-Channel Power MOSFET is a surface-mount transistor rated at a 40 V drain-source voltage and a continuous drain current of 3.9 A, designed for efficient power management applications.

Overview

Built on TrenchFET technology, this MOSFET has a low drain-source on-state resistance of 0.042 ohm at 10 V, which helps to minimise power loss and heat generation. Each unit undergoes 100% gate resistance testing. Its compact TO-236 (SOT-23) package suits space-constrained, surface-mount designs on printed circuit boards. The device can dissipate up to 750 mW and operates within a temperature range up to a maximum of 150°C. With a maximum gate-source threshold voltage of 3 V, it is suited to low-voltage drive circuits commonly found in modern digital systems.

Applications

• DC/DC converters, where it steps voltage up or down with minimal loss
• Load switching, for powering subsystems on and off within a device
• Power supply design
• Motor control modules
• Battery management systems

Key Specifications

• Channel type: N-Channel
• Drain-source voltage: 40 V
• Continuous drain current: 3.9 A
• On-state resistance: 0.042 ohm at 10 V
• Package: TO-236 (SOT-23), surface mount
• Power dissipation: 750 mW
• Gate-source threshold voltage (max): 3 V

Dimensions and Weight

• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 4.536 g

The VISHAY N-Channel Power MOSFET combines low on-state resistance, high current handling and a compact footprint, making it a versatile choice for power supply and battery management designs.