VISHAY N Channel Power MOSFET 30V 1.4A SOT-323

The VISHAY N Channel Power MOSFET is a high-performance TrenchFET® power component designed for reliable and efficient operation. With a drain-source voltage of 30V and a continuous drain current of 1.4A, this MOSFET delivers consistent power management for a variety of demanding electronic circuits. It features a low drain-source on-state resistance of just 0.132 ohms, which helps to minimise conduction losses and improve overall system efficiency.

This component is PWM optimised for fast switching, making it an excellent choice for applications that require rapid and precise control. It is 100% Rg tested to ensure quality and reliability, and it offers robust protection with up to 1800V ESD protection. Additionally, the device is halogen-free, supporting environmentally conscious manufacturing processes.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 1.4A
• Drain Source On State Resistance: 0.132 ohm
• Power Dissipation: 500mW
• Gate Source Threshold Voltage Max: 600mV
• Rds(on) Test Voltage: 10V
• Operating Temperature Max: 150°C
• No. of Pins: 3 Pins
• Product Range: E

Housed in a compact SOT-323 case style, this surface mount MOSFET is ideal for space-constrained PCB designs. Its combination of fast switching capabilities, robust ESD protection, and halogen-free construction makes it a versatile and dependable choice for modern electronic assemblies.