VISHAY N Channel Power MOSFET, 20 V, 2.9 A, 0.057 ohm, TO-236

The VISHAY N Channel Power MOSFET is a high-performance TrenchFET® power MOSFET designed specifically for load switching in portable devices. Offering a drain-source voltage of 20V and a continuous drain current of 2.9A, this component ensures reliable and efficient power management. It features a low drain-source on-state resistance of 0.057 ohm, which helps to minimise power loss and heat generation during operation.

This surface-mount MOSFET comes in a compact TO-236 case style, making it highly suitable for space-constrained electronic assemblies. With a gate-source threshold voltage of up to 850mV and a power dissipation rating of 710mW, it is engineered for precise switching control and robust performance. The device operates reliably at temperatures up to 150°C and features a gate-to-source voltage rating of ±8V.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 2.9A
• Drain Source On State Resistance: 0.057 ohm
• Rds(on) Test Voltage: 8V
• Gate Source Threshold Voltage Max: 850mV
• Power Dissipation: 710mW
• No. of Pins: 3
• Transistor Case Style: TO-236
• Transistor Mounting: Surface Mount
• Operating Temperature Max: 150°C

Whether you are designing power management systems or creating compact portable electronics, this VISHAY MOSFET provides the efficiency and reliability required for modern circuit designs. Its surface-mount configuration allows for automated assembly processes, ensuring consistent placement and soldering on printed circuit boards.