VISHAY N Channel MOSFET 8V 6A SOT-23

The VISHAY TrenchFET® Power MOSFET is a high-performance N-channel transistor designed for efficient power switching and signal amplification in compact electronic circuits. With a drain-source voltage (Vds) of 8V and a continuous drain current (Id) of 6A, this SOT-23 packaged device offers excellent current handling capability in a small footprint. The low on-state resistance of just 0.017 ohm minimises conduction losses, improving overall system efficiency.

Built-in ESD protection (typical 3000V) ensures robust reliability in handling and operation, while the 100% Rg tested feature guarantees consistent gate resistance performance. The surface-mount SOT-23 style is ideal for automated assembly and space-constrained PCB designs. With a maximum power dissipation of 2.5W and an operating temperature range up to 150°C, this MOSFET suits a wide variety of demanding applications.

Key features include a gate-source threshold voltage of 800mV (max), making it suitable for low-voltage drive circuits. The device comes in a 3-pin configuration and is part of the trusted TrenchFET® product range, delivering proven performance and durability.

Specifications:

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 8V
• Continuous Drain Current (Id): 6A
• On-State Resistance (Rds(on)): 0.017 ohm
• Rds(on) Test Voltage: 4.5V
• Gate-Source Threshold Voltage (max): 800mV
• Power Dissipation: 2.5W
• Transistor Case Style: SOT-23
• Mounting Type: Surface Mount
• No. of Pins: 3
• Operating Temperature (max): 150°C
• Product Range: TrenchFET®
• ESD Protection: 3000V (typical)