VISHAY IRFU9024PBF P-Channel Power MOSFET, 60V, 8.8A, TO-251AA
VISHAY IRFU9024PBF P-Channel Power MOSFET, 60V, 8.8A, 0.28 ohm, for industrial power management and switching.
The VISHAY IRFU9024PBF is a third-generation P-channel enhancement-mode Power MOSFET engineered to deliver the optimal balance of fast switching performance, a ruggedised device design, and exceptionally low on-state resistance. This component is specifically designed for through-hole mounting applications, offering robust construction and reliable operation in demanding electrical environments.
Capable of handling power dissipation levels of up to 1.5W in typical surface-mount configurations, this MOSFET is built to endure. Its advanced features include a high dynamic dV/dt rating, which enhances reliability in switching applications, and an ease of paralleling, allowing for scalable current-handling solutions in larger power systems. The component is also repetitively avalanche-rated, providing an added layer of protection against voltage transients.
Key Specifications and Features
- Channel Type: P-Channel enhancement mode
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 8.8A
- Drain-Source On-State Resistance (Rds(on)): 0.28 ohm (tested at 10V)
- Maximum Gate-Source Threshold Voltage: 4V
- Power Dissipation: 50W
- Transistor Case Style: TO-251AA (straight lead version)
- Mounting Type: Through Hole
- Number of Pins: 3
- Maximum Operating Temperature: 150°C
- Package Dimensions: 43mm (Height) x 33mm (Width) x 15mm (Depth)
- Weight: 0.4 grams
With its combination of ruggedness, efficiency, and ease of integration, the VISHAY IRFU9024PBF is a superior choice for designers seeking reliable power switching and management components.
- Industrial applications
- Power management systems
- Switching power supplies
- Motor control circuits
- Channel Type: P-Channel, Enhancement Mode
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 8.8A
- Drain-Source On-State Resistance (Rds(on)): 0.28 ohm
- Rds(on) Test Voltage: 10V
- Maximum Gate-Source Threshold Voltage: 4V
- Power Dissipation: 50W
- Transistor Case Style: TO-251AA
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Maximum Operating Temperature: 150°C
- Dimensions: 43mm (H) x 33mm (W) x 15mm (D)
- Weight: 0.4 grams
- Special Feature: Fast switching
- Special Feature: Ruggedised device design
- Special Feature: Dynamic dV/dt rating
- Special Feature: Ease of paralleling
- Special Feature: Repetitive avalanche rated
- Drain Source On State Resistance: 0.28ohm
- Gate Source Threshold Voltage Max: 4V
- of Pins: 3Pins
- Operating Temperature Max: 150°C
- SVHC: Lead (04-Feb-2026)
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