VISHAY IRFBG20PBF N-Channel Power MOSFET, 1kV, TO-220AB
VISHAY IRFBG20PBF 1000V Power MOSFET. Features 1.3A current, 11Ω on-resistance, TO-220AB package. For industrial & power management.
The VISHAY IRFBG20PBF is a robust 1000V N-channel enhancement-mode Power MOSFET, designed to offer an optimal blend of fast switching performance and a ruggedised device construction. As part of Vishay's third-generation Power MOSFET series, it features low ON-resistance, contributing to efficient power management and reduced heat generation. Its TO-220AB through-hole package is the industry-preferred choice for applications with power dissipation levels up to approximately 50W, favoured for its excellent thermal characteristics and widespread acceptance.
This MOSFET is engineered for reliability in demanding environments, boasting a high dynamic dV/dt rating and being repetitively avalanche rated for enhanced durability. Its fast switching capabilities make it suitable for high-frequency circuits, while the design facilitates ease of paralleling for higher current applications. The device also features simple drive requirements, simplifying integration into various power supply and control systems.
Key Specifications & Features
- Channel Type: N-channel enhancement mode
- Drain-Source Voltage (Vds): 1000V
- Continuous Drain Current (Id): 1.3A
- Drain-Source On-State Resistance (Rds(on)): 11Ω (tested at 10V)
- Gate-Source Threshold Voltage (Max): 4V
- Power Dissipation: 50W
- Package / Case Style: TO-220AB
- Mounting Type: Through Hole
- Number of Pins: 3
- Maximum Operating Temperature: 150°C
With its proven design and robust performance parameters, the IRFBG20PBF is a dependable component for engineers seeking a high-voltage switching solution that combines efficiency with ruggedness.
- Industrial power systems
- Power management circuits
- High-voltage switching applications
- Power supply units (PSUs)
- Channel Type: N Channel
- Drain Source Voltage (Vds): 1 kV
- Continuous Drain Current (Id): 1.3 A
- Drain Source On-State Resistance (Rds(on)): 11 ohm
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage (Max): 4V
- Power Dissipation: 50W
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Weight: 2 grams
- Dimensions (H x W x D): 43 mm x 33 mm x 15 mm
- Drain Source On State Resistance: 11ohm
- of Pins: 3Pins
- SVHC: Lead (04-Feb-2026)
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