VISHAY P-Channel Power MOSFET 100V 19A TO-220AB

VISHAY P-Channel Power MOSFET 100V 19A is a power MOSFET with a drain-source voltage of 100V and a continuous drain current of 19A, supplied in a TO-220AB through-hole package.

Overview

This P-channel MOSFET offers fast switching performance, rugged construction, and a low on-resistance of 0.2 ohm, which helps minimise power loss and heat generation. Its low thermal resistance of 1°C/W junction-to-case supports effective heat dissipation. The device has a high dynamic dv/dt rating and is rated for repetitive avalanche conditions, supporting reliable operation in demanding environments. It is designed for ease of paralleling in high-current applications and features simple drive requirements for straightforward circuit integration.

Key Features

• Gate-to-source voltage rating of ±20V
• Continuous drain current of 19A
• Power dissipation of 150W
• High dynamic dv/dt rating
• Rated for repetitive avalanche conditions
• Designed for ease of paralleling
• Simple drive requirements

Package and Thermal Performance

The industry-standard TO-220AB through-hole package facilitates easy mounting and effective thermal management when used with a heatsink. This package style, combined with the MOSFET's thermal performance, allows effective heat dissipation in compact designs. Dimensions: 3.3 (width) x 1.5 (depth) x 4.3 (height). Weight: 2 gm.

Applications

Ideal for a broad range of industrial and commercial applications, including power switching and control tasks.

Choose the VISHAY P-Channel Power MOSFET 100V 19A for a through-hole power switching device suited to industrial and commercial circuit designs.