VISHAY IRF9530PBF P-Channel Power MOSFET, 100V 12A TO-220AB
VISHAY IRF9530PBF P-Channel Power MOSFET, 100V, 12A, 0.3 ohm. Fast switching, rugged TO-220AB package for power management.
The VISHAY IRF9530PBF is a high-performance, third-generation HEXFET® power MOSFET, delivering an optimal blend of fast switching speed, robust construction, and exceptionally low on-resistance. This -100V P-channel MOSFET is engineered for reliability and efficiency in demanding commercial and industrial settings.
Its ruggedised device design ensures stable operation and durability, capable of handling power dissipation levels up to approximately 50 watts. The universally preferred TO-220AB through-hole package offers excellent thermal performance and ease of mounting, making it a versatile choice for a wide array of applications.
Key Features & Benefits
- Fast Switching & Low On-Resistance: Enables efficient power conversion with minimal losses, thanks to its Rds(on) of just 0.3 ohms.
- Robust & Reliable: Features a dynamic dV/dt rating and is rated for repetitive avalanche, enhancing its durability in harsh electrical environments.
- High-Temperature Operation: Can operate at a maximum junction temperature of 175°C, ensuring performance stability.
- Design Flexibility: Easy to parallel and has simple drive requirements, simplifying circuit design and implementation.
Ideal for power management applications where efficient switching and thermal performance are critical. Its combination of electrical characteristics and physical robustness makes it a dependable component for engineers and designers seeking a high-quality power MOSFET solution.
- Power Management Systems
- Switching Power Supplies
- DC-DC Converters
- Motor Control Circuits
- Channel Type: P Channel
- Drain-Source Voltage (Vds): 100 V
- Continuous Drain Current (Id): 12 A
- Drain-Source On-State Resistance (Rds(on)): 0.3 ohm
- Test Voltage for Rds(on): 10 V
- Gate-Source Threshold Voltage (Max): 4 V
- Maximum Power Dissipation: 88 W
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Maximum Operating Temperature: 175°C
- Weight: 2 grams
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Technology: Third Generation HEXFET®
- Fast switching Channel Type: P Channel
- Drain Source On State Resistance: 0.3ohm
- Rds(on) Test Voltage: 10V
- Power Dissipation: 88W
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- SVHC: Lead (04-Feb-2026)
Documents
Always follow local regulations and product guidance.
Free standard delivery on UK mainland orders. Express delivery options and international shipping available at checkout.
We offer a 30-day money-back guarantee on most products. For faulty items, contact us within 14 days for a replacement or refund.
View Full Delivery & Returns PolicySecure Transactions
We take the utmost care with your payment and personal details. Our website employs advanced encryption technology, including Secure Sockets Layer (SSL), to protect your information during transmission. You can verify a secure connection by looking for 'https' and a locked padlock in your browser.
Cookie Policy
Cookies enhance your shopping experience by keeping track of your basket and remembering you when you return. We also use banner advertising based on your browsing history to present products of potential interest.
Security Warning
Beware of phishing scams! We will never ask for personal details via email. If such information is required, we'll request you to contact us by phone. If you receive an email requesting sensitive information, do not respond and let us know immediately.
Recommended Products
Similar Products
You may like
