VISHAY IRF9510PBF P-Channel Power MOSFET 100V 3A TO-220AB
VISHAY IRF9510PBF P-Channel Power MOSFET, 100V, 3A, 1.2ohm. TO-220AB package for industrial & power management applications.
The VISHAY IRF9510PBF is a third-generation P-channel enhancement-mode power MOSFET, engineered to deliver an optimal balance of fast switching performance, rugged device design, and low on-resistance. This robust through-hole component is ideal for a wide array of demanding electronic applications where efficiency and reliability are critical.
Housed in the industry-standard TO-220AB package, it is universally preferred for applications with power dissipation levels up to approximately 50W. The low thermal resistance of this package enhances heat dissipation, contributing to its widespread acceptance and reliable operation under load.
Key Features & Benefits
- Rugged Design: Built to withstand repetitive avalanche conditions, ensuring durability in harsh operating environments.
- Fast Switching: Optimised for high-speed operation, improving efficiency in switching circuits.
- Low On-Resistance: Features a drain-source on-state resistance (Rds(on)) of just 1.2 ohm, which minimises power loss and heat generation during conduction.
- Easy to Use: Offers simple drive requirements and ease of paralleling for higher current applications.
- Wide Temperature Range: Rated for operation from -55°C to 175°C, providing exceptional thermal performance and stability.
- Dynamic dV/dt Rating: Ensures robustness against voltage transients, enhancing circuit protection.
Applications
This versatile power MOSFET is perfectly suited for power management and industrial control systems. Its characteristics make it an excellent choice for switch-mode power supplies (SMPS), motor drives, DC-DC converters, and load switching circuits. The combination of its electrical specs and robust package makes it a reliable foundation for efficient power electronics design.
- **Industrial control systems**
- **Power management circuits**
- **Switch-mode power supplies (SMPS)**
- **Motor drive and control**
- **Channel Type:** P-Channel
- **Drain-Source Voltage (Vds):** 100 V
- **Continuous Drain Current (Id):** 3 A
- **Drain-Source On-State Resistance (Rds(on)):** 1.2 ohm (tested at 10V)
- **Gate-Source Threshold Voltage (Max):** 4 V
- **Power Dissipation:** 20 W
- **Package / Case Style:** TO-220AB
- **Mounting Type:** Through Hole
- **Number of Pins:** 3
- **Operating Temperature Range:** -55°C to +175°C
- **Key Feature:** Dynamic dV/dt rating
- **Key Feature:** Repetitive avalanche rated
- **Key Feature:** Ease of paralleling
- **Key Feature:** Simple drive requirements
- **Dimensions (Package):** 15 mm (Depth) x 33 mm (Width) x 43 mm (Height)
- **Weight:** 2 grams
- Drain Source On State Resistance: 1.2ohm
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- SVHC: Lead (04-Feb-2026)
Documents
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