VISHAY IRF520PBF N-Channel Power MOSFET 100V 9.2A TO-220AB

The VISHAY IRF520PBF is a 100V N-channel Power MOSFET, offering designers an optimal blend of fast switching performance, a ruggedised device design, low on-resistance, and cost-effectiveness. Its low thermal resistance has made it a widely accepted and trusted component across the industry, ensuring reliable operation under demanding conditions.

This MOSFET is engineered for robustness and efficiency, featuring a dynamic dv/dt rating and being repetitive avalanche rated for enhanced durability in transient conditions. Its fast switching capability makes it suitable for high-frequency applications, while the ease of paralleling simplifies the design of higher current systems. The device requires simple drive circuitry, thanks to its gate-source voltage rating of ±20V.

Key Features

• Dynamic dv/dt Rating: Ensures reliability in the presence of fast voltage transients.
• Repetitive Avalanche Rated: Provides robust performance in inductive switching environments.
• Fast Switching: Enables efficient operation in high-frequency circuits.
• Low On-Resistance (Rds(on)): Minimises conduction losses for improved energy efficiency.
• Ease of Paralleling: Simplifies the design for applications requiring higher current handling.
• Simple Drive Requirements: Facilitates easy integration with standard gate drive circuits.

With a thermal resistance of 2.5°C/W from junction to case and 62°C/W from junction to ambient, the device effectively manages heat dissipation. Its through-hole TO-220AB package ensures secure mounting and excellent thermal connection to a heatsink when required, supporting a maximum power dissipation of 60W.