VISHAY Dual N-Channel MOSFET, 100V, 36.7A, 0.014 Ohm, PowerPAK SO-8

The VISHAY Dual N-Channel MOSFET is a high-performance semiconductor component engineered for demanding power management applications. Featuring a robust TrenchFET® design, this MOSFET is 100% Rg (gate resistance) tested to guarantee consistent performance and reliability, making it an excellent choice for precision switching circuits.

With a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) capacity of 36.7A per channel, it is built to handle significant power loads efficiently. A key specification is the exceptionally low drain-source on-state resistance (Rds(on)) of just 0.014 ohm, which minimises power loss and heat generation during operation, thereby improving overall system efficiency.

Housed in a compact PowerPAK SO-8 surface-mount device (SMD) package, it is ideal for modern, space-constrained PCB designs. The component supports a maximum power dissipation of 46W per channel and can operate at temperatures up to 150°C, ensuring stability in high-heat environments.

Primary Applications

This dual MOSFET is specifically designed for critical roles in power conversion systems. Its high-speed switching capabilities and efficiency make it perfectly suited for use in primary side switching circuits, synchronous rectification stages, and DC/AC inverters, commonly found in switch-mode power supplies (SMPS), industrial motor drives, and renewable energy systems.