VISHAY 2N7002K N-Channel Power MOSFET SOT-23 60V 190mA
VISHAY 2N7002K N-channel MOSFET in SOT-23, rated 60V and 190mA with 2Ω on-resistance. Suited to high-speed, space-constrained PCB designs.
VISHAY 2N7002K N-Channel Power MOSFET is an SOT-23 surface-mount transistor rated at 60V and 190mA, offering a 2Ω on-state resistance for efficient switching in electronic circuits.
Overview
The VISHAY 2N7002K is an N-channel enhancement-mode transistor built with TrenchFET design for a wide range of electronic applications. It features a low 2V threshold voltage, which supports efficient switching and low-voltage operation. With 25pF input capacitance and 25ns switching speed, it suits high-speed circuits where fast response is required. The device operates at a drain-source voltage of up to 60V and supports a continuous drain current of 190mA, with a maximum power dissipation of 350mW.
Key Features
- TrenchFET N-channel enhancement-mode design
- Low 2Ω ON-resistance for efficient power handling
- Low 2V threshold voltage for low-voltage switching
- Low 25pF input capacitance
- Fast 25ns switching speed
- 2000V ESD protection
- Halogen-free construction
- Operates without a buffer, simplifying circuit design
Package and Applications
The transistor is housed in a compact SOT-23 surface-mount package with three pins. This makes it suitable for automated assembly and space-constrained printed circuit boards. It is rated for a maximum operating temperature of 150°C, supporting stable operation across a range of thermal environments. Supplied dimensions are 3.3 (width), 1.5 (depth) and 4.3 (height), with a weight of 0.008 gm.
- High-speed circuits
- Low-voltage switching applications
- Space-constrained printed circuit boards
- Automated assembly
- Channel Type: N Channel
- Package Type: SOT-23 surface-mount, three pins
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 190mA
- On-State Resistance: 2Ω
- Threshold Voltage: 2V
- Input Capacitance: 25pF
- Switching Speed: 25ns
- ESD Protection: 2000V
- Maximum Power Dissipation: 350mW
- Maximum Operating Temperature: 150°C
- Special Feature: TrenchFET design
- Special Feature: Halogen-free construction
- Width: 3.3
- Depth: 1.5
- Height: 4.3
- Weight: 0.008 gm
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