Taiwan Semiconductor N-Channel Power MOSFET SOT-23 30V 3.5A

The Taiwan Semiconductor N-Channel Power MOSFET is a surface-mount transistor rated for 30V drain-source voltage and 3.5A continuous drain current, supplied in a compact SOT-23 package.

Overview

Engineered using an advanced trench process technology and a high-density cell design, this N-channel Power MOSFET is intended for power management and switching applications. Its on-resistance (Rds(on)) of 0.046Ω at a 10V test voltage is stated to minimise conduction losses, which supports improved efficiency in electronic designs. The device also features a low gate-source threshold voltage, allowing it to be effectively driven by low-voltage logic circuits.

Key Features

• Ultra-low on-resistance of 0.046Ω at 10V test voltage
• Rated for 30V drain-source voltage (Vds) and 3.5A continuous drain current (Id)
• Gate-source voltage tolerance of up to ±20V
• Junction-to-case thermal resistance of 75°C/W and junction-to-ambient thermal resistance of 130°C/W
• Maximum power dissipation of 1.25W
• Operating temperatures up to 150°C
• Compact SOT-23 surface-mount package with 3 pins

Specifications

• Channel Type: N-Channel
• Package: SOT-23 surface mount, 3 pins
• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 0.05 gm

Applications

The compact form factor suits space-constrained PCB layouts, and the device is intended for industrial electronic designs where thermal management is critical. Its combination of low resistance, current handling, and small footprint makes it a practical choice for designers working with power management and switching circuits.

Choose the Taiwan Semiconductor N-Channel Power MOSFET when a 30V, 3.5A N-channel device in a compact SOT-23 package is required for power switching.