STMicroelectronics Ultrafast Recovery Diode, 200V, 1A, 15ns, DO-41

The STMicroelectronics STTH1R02 is an ultra-fast recovery diode designed using ST's advanced 200 V planar Pt™ doping technology. It is particularly well-suited for demanding switching mode base drive and transistor circuits where efficiency and speed are critical.

This diode is intended for use in low-voltage, high-frequency applications such as inverters, as well as for free-wheeling and polarity protection functions. Its key performance characteristics include very low conduction losses and negligible switching losses, contributing to enhanced overall system efficiency. The component also features exceptionally low forward and reverse recovery times, allowing for high-speed operation without performance degradation.

Constructed to withstand rigorous conditions, it offers a high maximum junction temperature, ensuring reliable operation in thermally challenging environments. The diode is supplied in the industry-standard DO-41 (DO-204AL) axial-leaded package, making it compatible with standard PCB mounting and automated assembly processes.

Specifications

• Technology: 200 V planar Pt™ doping
• Key Features: Very low conduction and switching losses, low recovery times
• Repetitive Peak Reverse Voltage (VRRM): 200 V
• Average Forward Current (IF(AV)): 1 A
• Forward Voltage Max (VFM): 1 V
• Reverse Recovery Time (trr): 15 ns
• Forward Surge Current (IFSM): 60 A
• Maximum Operating Temperature: 175 °C
• Package / Case Style: DO-41 (DO-204AL)
• Number of Pins: 2
• Product Range: STTH1

This component represents a high-performance solution for designers seeking to optimise power efficiency and switching speed in their electronic circuits.