STMicroelectronics TIP35C NPN Power Transistor 125W 25A TO-247

The STMicroelectronics TIP35C NPN Power Transistor is a 125W, 25A complementary device in a TO-247 through-hole package, designed for linear and switching applications.

Overview

The TIP35C is built using planar technology with a unique 'base island' layout. It offers a DC current gain (hFE) of at least 10 at 15A and a collector-emitter saturation voltage of 4V at the full 25A collector current. The device has a 3MHz transition frequency and an operating junction temperature of up to 150°C, making it suitable for environments with elevated thermal stress.

Key Features

• 125W power dissipation (Pd) rating
• 25A continuous collector current (Ic)
• 100V collector-emitter voltage (Vce)
• DC current gain (hFE) of at least 10 at 15A
• 3MHz transition frequency
• Operating temperature maximum of 150°C
• TO-247 through-hole package for a secure mechanical and electrical connection on printed circuit boards

Applications

The transistor is suited to audio amplifiers, power supplies, motor controllers, and other general-purpose designs where a high-gain NPN device is required. Its ratings provide the headroom needed for a range of industrial and commercial designs.

Dimensions

Width 3.3, depth 1.5, height 4.3, with a weight of 2 g.

The STMicroelectronics TIP35C is a practical choice for designers who require an NPN power transistor with a 25A collector current rating in a TO-247 through-hole format.